dor_id: 4106970

506.#.#.a: Público

590.#.#.d: Los artículos enviados a la Revista Mexicana de Física se someten a un estricto proceso de revisión llevado a cabo por árbitros anónimos, independientes y especializados en todo el mundo.

510.0.#.a: Consejo Nacional de Ciencia y Tecnología (CONACyT), Sistema Regional de Información en Línea para Revistas Científicas de América Latina, el Caribe, España y Portugal (Latindex), Scientific Electronic Library Online (SciELO), SCOPUS, Web Of Science (WoS)

561.#.#.u: http://www.fciencias.unam.mx/

650.#.4.x: Físico Matemáticas y Ciencias de la Tierra

336.#.#.b: info:eu-repo/semantics/article

336.#.#.3: Artículo de Investigación

336.#.#.a: Artículo

351.#.#.6: https://rmf.smf.mx/ojs/rmf/index

351.#.#.b: Revista Mexicana de Física

351.#.#.a: Artículos

harvesting_group: RevistasUNAM

270.1.#.p: Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

590.#.#.c: Open Journal Systems (OJS)

270.#.#.d: MX

270.1.#.d: México

590.#.#.b: Concentrador

883.#.#.u: http://www.revistas.unam.mx/front/

883.#.#.a: Revistas UNAM

590.#.#.a: Coordinación de Difusión Cultural

883.#.#.1: http://www.publicaciones.unam.mx/

883.#.#.q: Dirección General de Publicaciones y Fomento Editorial, UNAM

850.#.#.a: Universidad Nacional Autónoma de México

856.4.0.u: https://rmf.smf.mx/ojs/rmf/article/view/313/158

100.1.#.a: Díaz Reyes, J.; Galván Arellano, M.; Mendoza Alvarez, J. G.; Arias Cerón, J. S.; Herrera Pérez, J. L.; López Cruz.

524.#.#.a: Díaz Reyes, J., et al. (2017). Characterization of highly doped Ga0.86 In0.14As0.13Sb0.87 grown by liquid phase epitaxy. Revista Mexicana de Física; Vol 63, No 1 Jan-Feb: 55-0. Recuperado de https://repositorio.unam.mx/contenidos/4106970

245.1.0.a: Characterization of highly doped Ga0.86 In0.14As0.13Sb0.87 grown by liquid phase epitaxy

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Facultad de Ciencias, UNAM

264.#.0.c: 2017

264.#.1.c: 2017-01-01

653.#.#.a: GaInAsSb semiconductors; Liquid phase epitaxy growth; Photoluminescence spectroscopy; Raman

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-ND 4.0 Internacional, https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es, fecha de asignación de la licencia 2017-01-01, para un uso diferente consultar al responsable jurídico del repositorio por medio de rmf@ciencias.unam.mx

884.#.#.k: https://rmf.smf.mx/ojs/rmf/article/view/313

001.#.#.#: oai:ojs.rmf.smf.mx:article/313

041.#.7.h: eng

520.3.#.a: Ga 0.86 In 0.14 As 0.13 Sb 0.87layers lattice-matched to (100) Te-GaSb have been grown using the liquid phase epitaxy technique under supercooling conditions. N and p type layers were grown by adding tellurium or zinc in a wide range of molar fraction in the growth solution. By Raman spectroscopy, the structural quality of the epilayers was characterized. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased, n- or p-type. Two main bands are observed in the Raman spectra centered at 230 and 245simcm-1that depend strongly on the incorporated dopant molar concentration (Te or Zn), which are assigned to the observed vibrational modes of GaAs-like and (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (or p)-type GaInAsSb was measured as function of dopant concentration added to the melt solution. The photoluminescence spectra were interpreted taking into account the nonparabolicity of the conduction (or valence) band. Both the band filled as well as band tailing effects due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly be taken into account for the observed features of the photoluminescence spectra. It is shown that the band-to-band transition energy can be used to estimate the free carrier concentration in GaInAsSb for a wide range of dopant concentration.

773.1.#.t: Revista Mexicana de Física; Vol 63, No 1 Jan-Feb (2017): 55-0

773.1.#.o: https://rmf.smf.mx/ojs/rmf/index

046.#.#.j: 2020-11-25 00:00:00.000000

022.#.#.a: 2683-2224 (digital); 0035-001X (impresa)

310.#.#.a: Bimestral

264.#.1.b: Sociedad Mexicana de Física, A.C.

758.#.#.1: https://rmf.smf.mx/ojs/rmf/index

handle: 00c8d83c58ddc5cc

harvesting_date: 2020-09-23 00:00:00.0

856.#.0.q: application/pdf

last_modified: 2020-11-27 00:00:00

license_url: https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es

license_type: by-nc-nd

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