dor_id: 41439

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856.4.0.u: http://revistas.unam.mx/index.php/rmf/article/view/14284/13621

100.1.#.a: Romero Paredes, G.; García Salgado, G.; Peña Sierra, R.; Vázquez, M. A.; Aguilar Rodríguez, G.

524.#.#.a: Romero Paredes, G., et al. (2007). FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions. Revista Mexicana de Física; Vol 53, No 006. Recuperado de https://repositorio.unam.mx/contenidos/41439

245.1.0.a: FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Facultad de Ciencias, UNAM

264.#.0.c: 2007

264.#.1.c: 2007-01-01

653.#.#.a: Porous silicon; FTIR spectra; photoluminescence; silicon oxide; structure defects

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-ND 4.0 Internacional, https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es, fecha de asignación de la licencia 2007-01-01, para un uso diferente consultar al responsable jurídico del repositorio por medio de rmf@ciencias.unam.mx

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041.#.7.h: eng

520.3.#.a: A study is presented on the evolution of the FTIR features and the changes in the photoluminescence (PL) spectra of chemically oxidized porous silicon layers (PSLs) successively aged under controlled conditions. The PSLs were prepared by the electrochemical method to guarantee uniformity over extended areas. Just after the silicon porification process, the FTIR spectra of the PSLs show silicon-hydrogen bands related to the hydrogen terminated porous silicon surface. As the PSLs oxidized, various vibrational modes were modified. The new observed vibrational frequencies are related to the defective silicon oxide formed at the porous silicon surface. The room temperature PL spectra of freshly prepared PSLs show a characteristic peak located at ∼700 nm. The intensity of the PL signal on chemically oxidized samples increased by an order of magnitude; afterwards, when the samples were aged in saturated water vapor conditions, the PL spectra were strongly modified. These changes indicated that the PSL structure is modified by the oxidization processes applied. Analysis of the FTIR data and the behavior of the PL signal enable us to interrelate the quantum size related effects and the formation of some kind of defect in the silicon oxide film over the PSLs. The characteristics of the PSLs reported in this paper are perfectly reproducible in the conditions used for the sample preparation; therefore, these films can be used in different applications.

773.1.#.t: Revista Mexicana de Física; Vol 53, No 006 (2007)

773.1.#.o: http://revistas.unam.mx/index.php/rmf

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Artículo

FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions

Romero Paredes, G.; García Salgado, G.; Peña Sierra, R.; Vázquez, M. A.; Aguilar Rodríguez, G.

Facultad de Ciencias, UNAM, publicado en Revista Mexicana de Física, y cosechado de Revistas UNAM

Licencia de uso

Procedencia del contenido

Entidad o dependencia
Facultad de Ciencias, UNAM
Revista
Repositorio
Contacto
Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

Cita

Romero Paredes, G., et al. (2007). FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions. Revista Mexicana de Física; Vol 53, No 006. Recuperado de https://repositorio.unam.mx/contenidos/41439

Descripción del recurso

Autor(es)
Romero Paredes, G.; García Salgado, G.; Peña Sierra, R.; Vázquez, M. A.; Aguilar Rodríguez, G.
Tipo
Artículo de Investigación
Área del conocimiento
Físico Matemáticas y Ciencias de la Tierra
Título
FTIR and photoluminescence studies of porous silicon layers oxidized in controlled water vapor conditions
Fecha
2007-01-01
Resumen
A study is presented on the evolution of the FTIR features and the changes in the photoluminescence (PL) spectra of chemically oxidized porous silicon layers (PSLs) successively aged under controlled conditions. The PSLs were prepared by the electrochemical method to guarantee uniformity over extended areas. Just after the silicon porification process, the FTIR spectra of the PSLs show silicon-hydrogen bands related to the hydrogen terminated porous silicon surface. As the PSLs oxidized, various vibrational modes were modified. The new observed vibrational frequencies are related to the defective silicon oxide formed at the porous silicon surface. The room temperature PL spectra of freshly prepared PSLs show a characteristic peak located at ∼700 nm. The intensity of the PL signal on chemically oxidized samples increased by an order of magnitude; afterwards, when the samples were aged in saturated water vapor conditions, the PL spectra were strongly modified. These changes indicated that the PSL structure is modified by the oxidization processes applied. Analysis of the FTIR data and the behavior of the PL signal enable us to interrelate the quantum size related effects and the formation of some kind of defect in the silicon oxide film over the PSLs. The characteristics of the PSLs reported in this paper are perfectly reproducible in the conditions used for the sample preparation; therefore, these films can be used in different applications.
Tema
Porous silicon; FTIR spectra; photoluminescence; silicon oxide; structure defects
Idioma
eng
ISSN
2683-2224 (digital); 0035-001X (impresa)

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