dor_id: 4128563

506.#.#.a: Público

590.#.#.d: Cada artículo es evaluado mediante una revisión ciega única. Los revisores son externos nacionales e internacionales.

510.0.#.a: Web of Science (WoS), Directory of Open Access Journals (DOAJ), Sistema Regional de Información en Línea para Revistas Científicas de América Latina, el Caribe, España y Portugal (Latindex), Scientific Electronic Library Online (SciELO), Consejo Nacional de Ciencia y Tecnología (CONACyT), La Red de Revistas Científicas de América Latina y el Caribe, España y Portugal (Redalyc)

561.#.#.u: https://www.fciencias.unam.mx/

650.#.4.x: Físico Matemáticas y Ciencias de la Tierra

336.#.#.b: article

336.#.#.3: Artículo de Investigación

336.#.#.a: Artículo

351.#.#.6: https://rmf.smf.mx/ojs/rmf/index

351.#.#.b: Revista Mexicana de Física

351.#.#.a: Artículos

270.1.#.p: Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

590.#.#.c: Open Journal Systems (OJS)

270.#.#.d: MX

270.1.#.d: México

590.#.#.b: Concentrador

883.#.#.u: http://www.revistas.unam.mx/front/

883.#.#.a: Revistas UNAM

590.#.#.a: Coordinación de Difusión Cultural, UNAM

883.#.#.1: https://www.publicaciones.unam.mx/

883.#.#.q: Dirección General de Publicaciones y Fomento Editorial, UNAM

850.#.#.a: Universidad Nacional Autónoma de México

856.4.0.u: https://rmf.smf.mx/ojs/index.php/rmf/article/view/Vol.%2064%2C%20Issue%203%2C%20pp.%20206-215/89

100.1.#.a: Castillo Ojeda, R. S.; Díaz Reyes, Joel; Galván Arellano, M.; Rivera Hernández, K. N.; Villa Ramírez, M. S.; Luna Suárez, S.

524.#.#.a: Castillo Ojeda, R. S., et al. (2018). Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs. Revista Mexicana de Física; Vol. 64 No. 3, 2018; 206-215. Recuperado de https://repositorio.unam.mx/contenidos/4128563

245.1.0.a: Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Facultad de Ciencias, UNAM

264.#.0.c: 2018

264.#.1.c: 2018-04-30

653.#.#.a: Iii-v substrates; cd1-xznxte ternary alloy; zn; te and cd mixture of elements; atomic layer deposition (ald); defect generation mechanism.

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-ND 4.0 Internacional, https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es, fecha de asignación de la licencia 2018-04-30, para un uso diferente consultar al responsable jurídico del repositorio por medio del correo electrónico rmf@ciencias.unam.mx

884.#.#.k: https://rmf.smf.mx/ojs/index.php/rmf/article/view/Vol.%2064%2C%20Issue%203%2C%20pp.%20206-215

001.#.#.#: rmf.oai:ojs2.rmf.smf.mx:article/228

041.#.7.h: eng

520.3.#.a: In this work are presented the results obtained from the deposition of Cd1-xZnxTe nanolayers using as precursor the vapours of the elements Zn, Te, and a mixture of Cd and Zn on GaAs and GaSb (001) substrates by Atomic Layer Deposition technique (ALD), which allows the deposition of layers of nanometric dimensions. At each exposure of the growth surface to the of cation or anion precursors vapours, this surface is saturated. Therefore, it is considered that the process is self-regulated. The ZnTe layers were grown in a wide range of temperatures; however, ZnTe nanolayers with a shiny mirror-like surface could be grown at temperatures between 370 and 410oC. Temperatures higher than 400oC were necessary for the CdTe growth. The layers of the Cd1-xZnxTe ternary alloy were deposited at temperature range of 400 and 425oC. The grown nanofilms were characterized by Raman spectroscopy and high-resolution X-ray diffraction. The Raman spectrum shows the peak corresponding to LO-ZnTe at 208 cm-1, which is weak and is slightly redshifted in comparison with the reported for the bulk ZnTe. For the case of the CdTe nanolayers, Raman spectrum presents the LO-CdTe peak, which is indicative of the successfully growth of the nanolayers, its weakness and its slight redshifted in comparison with the reported for the bulk CdTe can be related with the nanometric characteristic of this layer. The performed high resolution X-ray diffraction measurements allowed to study some important characteristics, as the crystallinity of the grown layers. Additionally, the performed HR-XRD measurements suggest that the crystalline quality have dependence with the growth temperature.

773.1.#.t: Revista Mexicana de Física; Vol. 64 No. 3 (2018); 206-215

773.1.#.o: https://rmf.smf.mx/ojs/rmf/index

022.#.#.a: ISSN electrónico: 2683-2224; ISSN impreso: 0035-001X

310.#.#.a: Bimestral

300.#.#.a: Páginas: 206-215

264.#.1.b: Facultad de Ciencias, UNAM

758.#.#.1: https://rmf.smf.mx/ojs/rmf/index

doi: https://doi.org/10.31349/RevMexFis.64.206

handle: 17442c59a03d902a

harvesting_date: 2022-08-17 16:00:00.0

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file_creation_date: 2018-02-28 20:39:15.0

file_name: cae8b33b3bec0b5f1ea37b57611323d8e2f9fa8daabfacf1991556d3dd053e08.pdf

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last_modified: 2022-11-29 12:00:00

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Artículo

Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs

Castillo Ojeda, R. S.; Díaz Reyes, Joel; Galván Arellano, M.; Rivera Hernández, K. N.; Villa Ramírez, M. S.; Luna Suárez, S.

Facultad de Ciencias, UNAM, publicado en Revista Mexicana de Física, y cosechado de Revistas UNAM

Licencia de uso

Procedencia del contenido

Entidad o dependencia
Facultad de Ciencias, UNAM
Revista
Repositorio
Contacto
Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

Cita

Castillo Ojeda, R. S., et al. (2018). Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs. Revista Mexicana de Física; Vol. 64 No. 3, 2018; 206-215. Recuperado de https://repositorio.unam.mx/contenidos/4128563

Descripción del recurso

Autor(es)
Castillo Ojeda, R. S.; Díaz Reyes, Joel; Galván Arellano, M.; Rivera Hernández, K. N.; Villa Ramírez, M. S.; Luna Suárez, S.
Tipo
Artículo de Investigación
Área del conocimiento
Físico Matemáticas y Ciencias de la Tierra
Título
Growth and characterization of Cd1-xZnxTe (0 \leq x \leq 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs
Fecha
2018-04-30
Resumen
In this work are presented the results obtained from the deposition of Cd1-xZnxTe nanolayers using as precursor the vapours of the elements Zn, Te, and a mixture of Cd and Zn on GaAs and GaSb (001) substrates by Atomic Layer Deposition technique (ALD), which allows the deposition of layers of nanometric dimensions. At each exposure of the growth surface to the of cation or anion precursors vapours, this surface is saturated. Therefore, it is considered that the process is self-regulated. The ZnTe layers were grown in a wide range of temperatures; however, ZnTe nanolayers with a shiny mirror-like surface could be grown at temperatures between 370 and 410oC. Temperatures higher than 400oC were necessary for the CdTe growth. The layers of the Cd1-xZnxTe ternary alloy were deposited at temperature range of 400 and 425oC. The grown nanofilms were characterized by Raman spectroscopy and high-resolution X-ray diffraction. The Raman spectrum shows the peak corresponding to LO-ZnTe at 208 cm-1, which is weak and is slightly redshifted in comparison with the reported for the bulk ZnTe. For the case of the CdTe nanolayers, Raman spectrum presents the LO-CdTe peak, which is indicative of the successfully growth of the nanolayers, its weakness and its slight redshifted in comparison with the reported for the bulk CdTe can be related with the nanometric characteristic of this layer. The performed high resolution X-ray diffraction measurements allowed to study some important characteristics, as the crystallinity of the grown layers. Additionally, the performed HR-XRD measurements suggest that the crystalline quality have dependence with the growth temperature.
Tema
Iii-v substrates; cd1-xznxte ternary alloy; zn; te and cd mixture of elements; atomic layer deposition (ald); defect generation mechanism.
Idioma
eng
ISSN
ISSN electrónico: 2683-2224; ISSN impreso: 0035-001X

Enlaces