dor_id: 4128533
506.#.#.a: Público
590.#.#.d: Cada artículo es evaluado mediante una revisión ciega única. Los revisores son externos nacionales e internacionales.
510.0.#.a: Web of Science (WoS), Directory of Open Access Journals (DOAJ), Sistema Regional de Información en Línea para Revistas Científicas de América Latina, el Caribe, España y Portugal (Latindex), Scientific Electronic Library Online (SciELO), Consejo Nacional de Ciencia y Tecnología (CONACyT), La Red de Revistas Científicas de América Latina y el Caribe, España y Portugal (Redalyc)
561.#.#.u: https://www.fciencias.unam.mx/
650.#.4.x: Físico Matemáticas y Ciencias de la Tierra
336.#.#.b: article
336.#.#.3: Artículo de Investigación
336.#.#.a: Artículo
351.#.#.6: https://rmf.smf.mx/ojs/rmf/index
351.#.#.b: Revista Mexicana de Física
351.#.#.a: Artículos
270.1.#.p: Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx
590.#.#.c: Open Journal Systems (OJS)
270.#.#.d: MX
270.1.#.d: México
590.#.#.b: Concentrador
883.#.#.u: http://www.revistas.unam.mx/front/
883.#.#.a: Revistas UNAM
590.#.#.a: Coordinación de Difusión Cultural, UNAM
883.#.#.1: https://www.publicaciones.unam.mx/
883.#.#.q: Dirección General de Publicaciones y Fomento Editorial, UNAM
850.#.#.a: Universidad Nacional Autónoma de México
856.4.0.u: https://rmf.smf.mx/ojs/index.php/rmf/article/view/5448/5689
100.1.#.a: Daniel, T. O.; Uno, U. E.; Isah, K. U.; Ahmadu, U.
524.#.#.a: Daniel, T. O., et al. (2021). Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application. Revista Mexicana de Física; Vol. 67 No. 2, 2021; 263-268. Recuperado de https://repositorio.unam.mx/contenidos/4128533
245.1.0.a: Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application
502.#.#.c: Universidad Nacional Autónoma de México
561.1.#.a: Facultad de Ciencias, UNAM
264.#.0.c: 2021
264.#.1.c: 2021-07-15
506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-ND 4.0 Internacional, https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es, fecha de asignación de la licencia 2021-07-15, para un uso diferente consultar al responsable jurídico del repositorio por medio del correo electrónico rmf@ciencias.unam.mx
884.#.#.k: https://rmf.smf.mx/ojs/index.php/rmf/article/view/5448
001.#.#.#: rmf.oai:ojs2.rmf.smf.mx:article/5448
041.#.7.h: eng
520.3.#.a: This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-ray spectroscopy and hall measurement were used to characterise the composition, microstructure and electrical properties of the SnS thin film. SnS thin films were found to consist of Sn and S elements whose composition varied with increase in thickness. The film conductivity was found to vary with grain size and grain boundary which is a function of the film thickness. The SnS film of 0.4 μm thickness shows optimal grain growth with a grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density which allows charge carriers to move freely in the lattice thereby causing a reduction in resistivity and increase in conductivity of the films which is essential in obtaining the threshold voltage for a transistor semiconductor channel layer operation. The carrier concentration of due to low resistivity of 3.612 ×105 Ωcm of 0.4 μm SnS thin film thickness is optimum and favours the attainment of the threshold voltage for a field effect transistor operation hence the application of SnS thin film as a semiconductor channel layer in a field effect transistor.
773.1.#.t: Revista Mexicana de Física; Vol. 67 No. 2 (2021); 263-268
773.1.#.o: https://rmf.smf.mx/ojs/rmf/index
022.#.#.a: ISSN electrónico: 2683-2224; ISSN impreso: 0035-001X
310.#.#.a: Bimestral
300.#.#.a: Páginas: 263-268
264.#.1.b: Facultad de Ciencias, UNAM
758.#.#.1: https://rmf.smf.mx/ojs/rmf/index
doi: https://doi.org/10.31349/RevMexFis.67.263
handle: 00b8fe16892309d4
harvesting_date: 2022-08-17 16:00:00.0
856.#.0.q: application/pdf
file_creation_date: 2021-02-23 16:40:24.0
file_name: 711c1eb5bd0c5f6ba8f9eef1524883e5ee7d188a8d78e7eaf908cd8d9b5a66ee.pdf
file_pages_number: 6
file_format_version: application/pdf; version=1.2
file_size: 1147944
last_modified: 2022-11-29 12:00:00
license_url: https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es
license_type: by-nc-nd
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